Switching element and memory device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12193340
APP PUB NO 20230301205A1
SERIAL NO

17943763

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Abstract

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A switching element includes a first electrode, a second electrode, and a switching material layer provided between the first electrode and the second electrode. The switching material layer contains silicon (Si), oxygen (O), arsenic (As), and a predetermined element selected from lead (Pb), silver (Ag), indium (In), tin (Sn), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), selenium (Se), antimony (Sb), tellurium (Te), gold (Au) and bismuth (Bi).

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Igarashi, Taichi Seoul, KR 18 31
Ito, Yuichi Seoul, KR 160 1840
Kitagawa, Eiji Seoul, KR 135 3207

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