Method of forming semiconductor device having carbon nanotube

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12193318
APP PUB NO 20220190252A1
SERIAL NO

17688259

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Abstract

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A method includes placing a first charged metal dot on a first position of a surface of a semiconductor substrate. A first charged region is formed on a second position of the surface of the semiconductor substrate. A precursor gas is flowed along a first direction from the first position toward the second position on the semiconductor substrate, thereby forming a first carbon nanotube (CNT) on the semiconductor substrate. A dielectric layer is deposited to cover the first CNT and the semiconductor substrate. A second charged metal dot is placed on a third position of a surface of the dielectric layer. A second charged region is formed on a fourth position of the surface of the dielectric layer. The precursor gas is flowed along a second direction from the third position toward the fourth position on the semiconductor substrate, thereby forming a second CNT on the first CNT.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Duriez, Blandine Brussels, BE 86 351
Holland, Martin Christopher San Jose, US 80 1005
Vasen, Timothy Linthicum Heights, US 32 34

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