Method for forming semiconductor structure and semiconductor structure

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12193217
APP PUB NO 20220139924A1
SERIAL NO

17575149

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method for forming a semiconductor structure and the semiconductor structure are provided. The method for forming the semiconductor structure includes: providing a substrate, wherein a separate bit line structure is formed on the substrate; forming a first sacrificial layer on the side wall of the bit line structure; forming a first dielectric layer filling gap between the bit line structures; patterning the first dielectric layer and the first sacrificial layer to form a through hole, wherein the through hole and the remaining first dielectric layer and first sacrificial layer are alternately arranged; forming a second sacrificial layer on the side wall of the through hole, and filling the through hole to form a contact plug; forming a contact structure on the contact plug; and removing the first sacrificial layer to form a first air gap, and removing the second sacrificial layer to form a second air gap.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • CHANGXIN MEMORY TECHNOLOGIES, INC.

International Classification(s)

  • No Non-US Classification to display

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liao, Chuxian Hefei, CN 5 4
Ying, Zhan Hefei, CN 72 63
Zhu, Yuhan Hefei, CN 13 23

Cited Art Landscape

Load Citation

Patent Citation Ranking

  • No Patent Citation Ranking to display

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Jul 7, 2028
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 7, 2032
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 7, 2036
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00