Vertical cavity surface emitting laser device with monolithically integrated photodiode

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12191630
APP PUB NO 20220094137A1
SERIAL NO

17539266

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Abstract

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A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InxGa1-xAs layer, where 0≤x<1. The light absorption region has an InyGa1-yAs layer, where 0x. The InyGa1-yAs layer is an intrinsic layer of the light absorption region. The InyGa1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InyGa1-yAs layer. The InyGa1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.

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Patent Owner(s)

  • TRUMPF PHOTONIC COMPONENTS GMBH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gerlach, Philipp Henning Ulm, DE 17 77
Moench, Holger Joachim Vaals, NL 20 56
Weichmann, Ulrich Aachen, DE 37 544
Weidenfeld, Susanne Weilheim, DE 5 3

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