Semiconductor device with buried gate structure
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United States of America
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Jan 7, 2025
Grant Date -
Feb 9, 2023
app pub date -
Mar 8, 2022
filing date -
Mar 8, 2022
priority date (Note) -
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Abstract
Present invention relates to a semiconductor device including a buried gate structure. A semiconductor device comprises a substrate; a first fluorine-containing layer over the substrate; a trench formed in the first fluorine-containing layer and extended into the substrate; a gate dielectric layer formed over the trench; a gate electrode formed over the gate dielectric layer and filling a portion of the trench; a second fluorine-containing layer formed over the gate electrode; and a fluorine-containing passivation layer between the gate dielectric layer and the gate electrode.
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