Integrated circuit structure with resistive semiconductor material for back well

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12191300
APP PUB NO 20230369314A1
SERIAL NO

17662921

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Abstract

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Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semiconductor material coupled to a first contact, and a second doped semiconductor material coupled to a second contact. The deep well couples the first doped semiconductor material to the second doped semiconductor material. A first back well is within a second portion of the deep well. A first resistive semiconductor material is within the deep well and defines a boundary between the first portion of the deep well and the second portion of the deep well.

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GLOBALFOUNDRIES U S INC2600 GREAT AMERICA WAY SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choppalli, Satyasuresh Vvss Bangalore, IN 4 0
Dutta, Anupam Bangalore, IN 20 20
Gauthier,, Jr Robert J Williston, US 214 2516
Krishnasamy, Rajendran Essex Junction, US 89 265
Lin, Lin Houston, US 257 1731
Lu, Xiangxiang Essex Junction, US 8 12
Nath, Anindya Essex Junction, US 29 20

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