Multi-step isotropic etch patterning of thick copper layers for forming high aspect-ratio conductors
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United States of America
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Jan 7, 2025
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app pub date -
Dec 23, 2020
filing date -
Dec 23, 2020
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Abstract
An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion.
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