Semiconductor device and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12191144
APP PUB NO 20220375782A1
SERIAL NO

17876487

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Abstract

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A method includes forming a mask layer above a substrate. The substrate is patterned by using the mask layer as a mask to form a trench in the substrate. An isolation structure is formed in the trench, including feeding first precursors to the substrate. A bias is applied to the substrate after feeding the first precursors. With the bias turned on, second precursors are fed to the substrate. Feeding the first precursors, applying the bias, and feeding the second precursors are repeated.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78
NATIONAL TAIWAN UNIVERSITYNO 1 SEC 4 ROOSEVELT RD TAIPEI TAIPEI 106319
NATIONAL TAIWAN NORMAL UNIVERSITYTAIPEI

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Miin-Jang Taipei, TW 66 230
Chen, Tse-An Taoyuan, TW 25 16
Cheng, Po-Hsien Taipei, TW 28 21
Chou, Chun-Yi Hsinchu, TW 22 96

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