Sense amplifier circuit, memory device, and operation method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12190985
APP PUB NO 20220270653A1
SERIAL NO

17741722

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Abstract

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A sense amplifier circuit, memory device and related operation methods are provided. The sense amplifier circuit includes an amplification circuit for amplifying a voltage signal and a compensation circuit coupled to the amplification circuit. The amplification circuit includes a first inverting amplifier and a second inverting amplifier cross-coupled with each other, with the first inverting amplifier connected to a first bitline and the second inverting amplifier connected to a second bitline. The compensation circuit includes a first, a second, a third, and a fourth switch circuits, and is configured to generate a compensation voltage between the first bitline and the second bitline by conducting charge injections through operating the switch circuits to compensate an input-referred offset voltage of the amplification circuit.

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Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INC230000 ROOM 630 HAI HENG MANSION 6 CUI WEI ROAD HEFEI ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE ANHUI HEFEI CITY ANHUI PROVINCE 230000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cao, Kanyu Hefei, CN 37 48
Shang, Weibing Hefei, CN 52 34

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