SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class

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United States of America

PATENT NO 12188152
APP PUB NO 20240011191A1
SERIAL NO

18371423

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Abstract

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A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer contains an impurity element which determines the conductivity type of the epitaxial layer and boron which has a conductivity type different from the conductivity type of the impurity element, and the concentration of boron is less than 1.0×1014 cm−3 at any position in the plane of the epitaxial layer.

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Patent Owner(s)

  • RESONAC CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tanaka, Kensho Chichibu, JP 5 2
Umeta, Yoshikazu Chichibu, JP 16 4

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