Method for clonal-growth of single-crystal metal

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12188150
APP PUB NO 20220136134A1
SERIAL NO

17433756

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Abstract

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A method for clonal-growth of a single-crystal metal, including: using copper as an example, placing an existing small-sized single-crystal copper foil with a plane of any index on a copper foil that needs to be single-crystallized, and performing annealing to obtain, by cloning, a large-area (in meters) single-crystal copper foil with the same surface index as that of the parent facet. The method solves the difficult problem of large-area single-crystal copper foil preparation. By performing annealing, a parent single-crystal copper foil with a very small size (˜0.25 cm2) can be cloned to produce a large-area (˜700 cm2) single-crystal copper foil, which is an increase in area of about 3000 times.

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Patent Owner(s)

Patent OwnerAddress
PEKING UNIVERSITY100871 NO 5 THE SUMMER PALACE ROAD BEIJING HAIDIAN DISTRICT BEIJING CITY BEIJING CITY 100871

International Classification(s)

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  • 2019 Application Filing Year
  • C30B Class
  • 480 Applications Filed
  • 341 Patents Issued To-Date
  • 71.05 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Kaihui Beijing, CN 11 5
Wang, Enge Beijing, CN 5 0
Wu, Muhong Beijing, CN 2 0
Yu, Dapeng Beijing, CN 8 28
Zhang, Zhibin Beijing, CN 60 230

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges18200102030405060708090100110120130140150160170180190200

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