Device and method for continuous VGF crystal growth through reverse injection synthesis

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12188145
APP PUB NO 20210285123A1
SERIAL NO

16627919

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Abstract

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The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and a gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.

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Patent Owner(s)

Patent OwnerAddress
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATIONWANG SHUJIE NO 113 HEZUO ROAD SHIJIAZHUANG HEBEI 050000 050000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fu, Lijie Hebei, CN 13 0
Jiang, Jian Hebei, CN 84 533
Li, Xiaolan Hebei, CN 18 4
Liu, Huisheng Hebei, CN 31 359
Shao, Huimin Hebei, CN 14 0
Shi, Yanlei Hebei, CN 14 0
Sun, Niefeng Hebei, CN 17 0
Sun, Tongnian Hebei, CN 14 0
Wang, Shujie Hebei, CN 40 49
Wang, Yang Hebei, CN 887 5589
Zhang, Xiaodan Hebei, CN 31 132

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