Silicon oxynitride based encapsulation layer for magnetic tunnel junctions

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12185641
APP PUB NO 20220384718A1
SERIAL NO

17875046

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Abstract

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A plasma enhanced chemical vapor deposition (PECVD) method is disclosed for forming a SiON encapsulation layer on a magnetic tunnel junction (MTJ) sidewall that minimizes attack on the MTJ sidewall during the PECVD or subsequent processes. The PECVD method provides a higher magnetoresistive ratio for the MTJ than conventional methods after a 400° C. anneal. In one embodiment, the SiON encapsulation layer is deposited using a N2O:silane flow rate ratio of at least 1:1 but less than 15:1. A N2O plasma treatment may be performed immediately following the PECVD to ensure there is no residual silane in the SiON encapsulation layer. In another embodiment, a first (lower) SiON sub-layer has a greater Si content than a second (upper) SiON sub-layer. A second encapsulation layer is formed on the SiON encapsulation layer so that the encapsulation layers completely fill the gaps between adjacent MTJs.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Patel, Sahil Fremont, US 48 248
Shen, Dongna San Jose, US 64 320
Sundar, Vignesh Sunnyvale, US 45 204
Tong, Ru-Ying Los Gatos, US 183 4860
Wang, Yu-Jen San Jose, US 264 2926

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