Method for manufacturing semiconductor device and semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12185525
APP PUB NO 20230053370A1
SERIAL NO

17598836

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Abstract

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The present disclosure provides a method for manufacturing a semiconductor device and a semiconductor device. The method for manufacturing a semiconductor device includes: providing a substrate; forming a plurality of first structures extending in a first direction on the substrate; forming a sacrificial layer on sidewalls of the first structures; forming an outer spacer layer on a sidewall of the sacrificial layer; removing part of the outer spacer layer to obtain a patterned outer spacer layer that exposes part of the sacrificial layer; and removing the sacrificial layer to form air gaps between the patterned outer spacer layer and the first structures.

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Patent Owner(s)

Patent OwnerAddress
CHANGXIN MEMORY TECHNOLOGIES INC230000 ROOM 630 HAI HENG MANSION 6 CUI WEI ROAD HEFEI ECONOMIC AND TECHNOLOGICAL DEVELOPMENT ZONE ANHUI HEFEI CITY ANHUI PROVINCE 230000

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bai, Jie Hefei, CN 129 835
Yang, Mengmeng Hefei, CN 25 10

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