Electrostatic discharge clamp topology

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12184273
APP PUB NO 20230283279A1
SERIAL NO

18111055

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Abstract

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A clamping circuit comprises a first field-effect transistor (FET) having a gate, a source, and a drain, a diode, a first voltage source, and coupling circuitry configured to couple the first voltage source to the drain of the first FET and the diode to the source of the first FET.

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Patent Owner(s)

Patent OwnerAddress
SKYWORKS SOLUTIONS INCWOBURN MA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bergsma, Adrian John Kanata, CA 25 183

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