Gate drive circuit and drive method for power semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12184268
APP PUB NO 20240405761A1
SERIAL NO

18359285

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Abstract

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A gate drive circuit for a power semiconductor device, a low-side switching circuit, a high-side switching circuit, and a drive method are disclosed. When a first gate driver receives a control signal which is at a first level, the first gate driver connects a first gate to a first voltage, so that the first gate controls a channel region. When the transistor operates on a Miller plateau, the area of an overlapping region between the first gate and a drain inside the transistor is relatively small, so the Miller capacitance of the transistor is relatively small, thereby improving the switching speed of the transistor. A second gate is connected to a second voltage after a first duration, so that the second gate controls a drift region of the transistor to form an accumulation layer, and the accumulation layer has a relatively high carrier concentration.

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Patent Owner(s)

Patent OwnerAddress
INNOVISION SEMICONDUCTOR INC401 8# BUILDING INNOVATION SCI&TECH PARK SONGSHAN LAKE HIGH TECH DEVELOPMENT ZONE DONGGUAN 523808

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Feng Shanghai, CN 239 1435
Li, Xuening Dongguan, CN 22 380
Tao, Wanke Chongqing, CN 2 7

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