Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure
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United States of America
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Dec 31, 2024
Grant Date -
Jul 29, 2021
app pub date -
Mar 22, 2021
filing date -
Mar 22, 2021
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Abstract
A method of forming a semiconductor structure includes providing a substrate comprising a first material portion and a single crystal silicon layer on the first material portion. The substrate further comprises a major front surface, a major backside surface opposing the major front surface, and a plurality of grooves positioned in the major front surface. A buffer layer is deposited in one or more of the plurality of grooves. A semiconductor material is epitaxially grown over the buffer layer and in the one or more plurality of grooves, the epitaxially grown semiconductor material comprising a hexagonal crystalline phase layer and a cubic crystalline phase structure disposed over the hexagonal crystalline phase.
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