Fin field-effect transistor with a gate structure having a dielectric protection layer
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United States of America
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Dec 31, 2024
Grant Date -
Nov 10, 2022
app pub date -
Jul 20, 2022
filing date -
Jul 20, 2022
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate dielectric within the first region. The semiconductor device includes a metal gate within the first region. The semiconductor device includes a dielectric protection layer, in contact with the gate dielectric layer, that includes a first portion within the second region and a second portion lining a top surface of the metal gate.
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