SiC composite substrate and composite substrate for semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12183792
APP PUB NO 20210384300A1
SERIAL NO

17445617

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Abstract

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Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTDNAGOYA-SHI AICHI 467-8530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsushima, Kiyoshi Nagoya, JP 18 29
Miyakaze, Risa Nagoya, JP 4 0
Watanabe, Morimichi Nagoya, JP 66 600
Yoshikawa, Jun Nagoya, JP 136 4192

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