Semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America
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Dec 31, 2024
Grant Date -
Nov 30, 2023
app pub date -
Aug 9, 2023
filing date -
Aug 9, 2023
priority date (Note) -
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Abstract
An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
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