Read operations based on a dynamic reference
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United States of America
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Dec 31, 2024
Grant Date -
Jan 20, 2022
app pub date -
Jun 29, 2021
filing date -
Jun 29, 2021
priority date (Note) -
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Abstract
Methods, systems, and devices for read operations based on a dynamic reference are described. A memory device may include a set of memory cells each associated with a capacitive circuit including a first and second capacitor. After receiving a read command, the memory device may couple each capacitive circuit with a respective memory cell (e.g., to transfer a charge stored by each respective memory cell to a capacitive circuit) and may couple the second capacitor of each capacitive circuit to a reference voltage bus. Thus, a reference voltage on the reference voltage bus may be based on an average charge across the second capacitors of each capacitive circuit. The memory device may then compare a charge stored by the first and second capacitors of each capacitive circuit with the reference voltage bus and may output a set of values stored by the set of memory cells based on the comparing.
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