Optical proximity correction method and method of manufacturing extreme ultraviolet mask by using the same
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United States of America
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Dec 31, 2024
Grant Date -
Dec 29, 2022
app pub date -
Feb 18, 2022
filing date -
Feb 18, 2022
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Abstract
An optical proximity correction (OPC) method of effectively imitating a mask topography effect for a mask having a curvilinear pattern includes generating a library for edge filters of a near field by using an electromagnetic field simulation; generating an any-angle edge filter by using the library; for a mask having a curvilinear pattern, generating a first mask image by using thin mask approximation; determining whether the curvilinear pattern satisfies a reference; when the curvilinear pattern satisfies the reference, performing skewed Manhattanization on the curvilinear pattern and then generating a second mask image by applying the any-angle edge filter to edges of the curvilinear pattern.
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