Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same
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United States of America
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Dec 24, 2024
Grant Date -
Jun 2, 2022
app pub date -
Dec 2, 2021
filing date -
Dec 2, 2021
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Abstract
A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.
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