Charge balanced power Schottky barrier diodes

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12176442
APP PUB NO 20230143171A1
SERIAL NO

17519898

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Abstract

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A diode includes a semiconductor region having at least one two-dimensional carrier channel of a first conductivity type, the first conductivity type being one of a n-type and a p-type conductivity, the at least one two-dimensional channel having a net charge; a material of a second conductivity type, the second conductivity type being the other of the n-type and the p-type conductivity, disposed on the semiconductor region, the material of the second conductivity type having a net-charge in a depletion region that is substantially equal to the net-charge of the at least one two-dimensional channel in the semiconductor region when the diode is under reverse bias; an anode material in contact with at least a portion of the at least one two-dimensional channel and at least a portion of the material of the second conductivity type; and a cathode material in contact with the at least one two-dimensional carrier channel.

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Patent Owner(s)

Patent OwnerAddress
VIRGINIA TECH INTELLECTUAL PROPERTIES INCVIRGINIA TECH HOLTZMAN ALUMNI CENTER 3RD FLOOR 901 PRICES FORK ROAD BLACKSBURG VA 24061

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Xiao, Ming Blacksburg, US 70 759
Zhang, Yuhao Blacksburg, US 32 105

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