Semiconductor device structure and method for forming the semiconductor device structure

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PATENT NO 12176390
APP PUB NO 20230268390A1
SERIAL NO

17678511

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Abstract

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A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a fin isolation structure formed beside the nanostructures. The structure also includes a work function layer surrounding the nanostructures and covering a sidewall of the fin isolation structure. The structure also includes a gate electrode layer covering the work function layer. The gate electrode layer has an extending portion surrounded by the work function layer.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kuan-Chung Taipei, TW 35 183
Chen, Liang-Yi Taipei, TW 19 158
Cheng, Chun-Fai Tin Shui Wa, HK 54 563
Lee, Chih-Wei New Taipei, TW 65 344
Wang, Chi-An Hsinchu, TW 15 37

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