Reflection mode photomask

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United States of America

PATENT NO 12176211
APP PUB NO 20230360914A1
SERIAL NO

18356366

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Abstract

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A reflection mode photomask includes a multilayer over a substrate. The reflection mode photomask further includes a plurality of absorber stacks over the multilayer. Each absorber stack of the plurality of absorber stacks includes an absorber layer, wherein a material of the absorber layer is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride. Each absorber stack of the plurality of absorber stacks further includes an anti-reflective coating (ARC) layer on the absorber layer, wherein a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 SCIENCE BASED INDUSTRIAL PARK HSINCHU 300

International Classification(s)

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  • 2023 Application Filing Year
  • H01L Class
  • 19835 Applications Filed
  • 4214 Patents Issued To-Date
  • 21.25 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chun-Lang Hsinchu, TW 55 312
Tu, Chih-Chiang Hsinchu, TW 85 480

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3335716251501 - 1011 - 20020004000600080001000012000140001600018000200002200024000260002800030000320003400036000

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