Pellicle for an EUV lithography mask and a method of manufacturing thereof

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United States of America

PATENT NO 12174527
APP PUB NO 20230367203A1
SERIAL NO

18226155

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Abstract

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A pellicle for an EUV photo mask includes a first capping layer, a matrix layer disposed over the first capping layer, a second capping layer disposed over the matrix layer; and a metallic layer disposed over the second capping layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Yun-Yue Hsinchu, TW 77 363

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