Fin field effect transistor devices including NMOS device and PMOS device with varied geometry of work function layers

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12170332
APP PUB NO 20230369493A1
SERIAL NO

18356256

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Abstract

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A semiconductor structure includes a first device and a second device. The first device includes a plurality of first fins, a first work function layer over the plurality of first fins, and a first contact layer over the first work function layer. The second device includes a plurality of second fins, a second work function layer and the first work function layer over the plurality of the second fins, and a second contact layer over the first work function layer and the second work function layer. A distance between a bottom surface of the first work function layer and a bottom surface of the first contact layer is greater than a distance between a side surface of the first work function layer of the first device and a side surface of the first contact layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ryan Chia-Jen Hsinchu, TW 173 1719
Huang, Yuan-Sheng Taichung, TW 42 174

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