Nitride semiconductor device with element isolation area

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12170316
APP PUB NO 20240047533A1
SERIAL NO

18490965

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Abstract

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A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKA KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hung, Hung Kawasaki Kanagawa, JP 61 130
Isobe, Yasuhiro Ota Tokyo, JP 53 566
Kobayashi, Hitoshi Yamato Kanagawa, JP 190 2275
Ohno, Tetsuya Yokohama Kanagawa, JP 66 553
Sugiyama, Toru Musashino Tokyo, JP 138 1630
Yoshioka, Akira Yokohama Kanagawa, JP 105 590

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