Super junction silicon carbide semiconductor device and manufacturing method thereof
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United States of America
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Dec 17, 2024
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Sep 8, 2022
app pub date -
Mar 3, 2022
filing date -
Mar 3, 2022
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Abstract
A method of manufacturing a superjunction silicon carbide semiconductor device is provided, enabling a reduction of the number of times a combination of epitaxial growth and ion implantation for forming a parallel pn structure is performed. In the method of manufacturing the superjunction silicon carbide semiconductor device, forming an epitaxial layer 2a, 2b of a second conductivity type on a front surface of a silicon carbide semiconductor substrate 1 of a first conductivity type and selectively forming semiconductor regions 4a, 4b of the first conductivity type by implanting nitrogen ions in the epitaxial layer are repeated multiple times, thereby forming the parallel pn structure.
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