Substrate processing apparatus and substrate processing method

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12170209
APP PUB NO 20220037167A1
SERIAL NO

17443358

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Abstract

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A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDAKASAKA BIZ TOWER 3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kasahara, Masatoshi Kumamoto, JP 11 390
Nakao, Hidetoshi Kumamoto, JP 10 58
Saiki, Daisuke Kumamoto, JP 8 21
Yabuta, Takashi Kumamoto, JP 16 131

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