Optoelectronic synaptic memristor

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United States of America

PATENT NO 12169773
APP PUB NO 20220036170A1
SERIAL NO

17480391

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Abstract

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An optoelectronic synaptic memristor includes: a bottom electrode layer, a porous structure layer modified with quantum dots, a two-dimensional material layer, a transparent top electrode layer, and a waveguide layer, which are arranged in sequence from top to bottom, wherein the waveguide is ridge shaped for light conduction, comprising a wedge-shaped output terminal, wherein: through the wedge-shaped output terminal of the waveguide, light is vertically injected into the two-dimensional material layer and the porous structure layer modified with the quantum dots. By integrating the waveguide and the optoelectronic memristor, the present invention obtains the highly controlled characteristics with high alignment and confinement for light effect on the device and has advantages in realizing optoelectronic synergy in the optoelectronic synaptic memristors. The present invention has strong controllability and excellent performance and can be widely used in high-density integration of storage and computing, artificial synapses, artificial intelligence, etc.

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Patent Owner(s)

Patent OwnerAddress
BEIHANG UNIVERSITY100191 NO 37 HAIDIAN DISTRICT BEIJING XUEYUAN ROAD BEIJING CITY BEIJING CITY 100191

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gao, Qin Beijing, CN 7 21
Huang, Anping Beijing, CN 2 19
Ji, Yuhang Beijing, CN 1 0
Wang, Mei Beijing, CN 89 611
Xiao, Zhisong Beijing, CN 1 0

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