Transmission gate structure

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12169679
APP PUB NO 20230385519A1
SERIAL NO

18362195

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Abstract

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A transmission gate structure includes first and second PMOS transistors positioned in a first active area, first and second NMOS transistors positioned in a second active area parallel to the first active area, and four metal segments parallel to the active areas. A first metal segment overlies the first active area, a fourth metal segment overlies the second active area, and second and third metal segments are a total of two metal segments positioned between the first and fourth metal segments. A first conductive path connects gates of the first PMOS and NMOS transistors, a second conductive path connects gates of the second PMOS and NMOS transistors, a third conductive path connects a source/drain (S/D) terminal of each of the first and second PMOS transistors and first and second NMOS transistors and includes a first conductive segment extending across at least three of the four metal segments.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

International Classification(s)

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  • 2023 Application Filing Year
  • G06F Class
  • 43128 Applications Filed
  • 15539 Patents Issued To-Date
  • 36.03 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ting Yu Hsinchu, TW 48 197
Chiang, Ting-Wei Hsinchu, TW 181 905
Chien, Shao-Lun Hsinchu, TW 17 72
Sue, Pin-Dai Hsinchu, TW 63 438
Tien, Li-Chun Hsinchu, TW 276 2262

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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges68422388075101 - 1011 - 2021 - 3031 - 40050001000015000200002500030000350004000045000500005500060000650007000075000

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