Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12166134
APP PUB NO 20220149201A1
SERIAL NO

17433458

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Abstract

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A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with high reliability is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer, a first insulating layer, a second insulating layer, and a conductive layer. The semiconductor layer, the second insulating layer, and the conductive layer are stacked in this order over the first insulating layer. The semiconductor layer contains indium and oxygen and has a composition falling within a range obtained by connecting first coordinates (1:0:0), second coordinates (2:1:0), third coordinates (14:7:1), fourth coordinates (7:2:2), fifth coordinates (14:4:21), sixth coordinates (2:0:3), and the first coordinates in this order with a straight line in a ternary diagram showing atomic ratios of indium to an element M and zinc. In addition, the element M is one or more of gallium, aluminum, yttrium, and tin.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDKANAGAWA JAPAN KANAGAWA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koezuka, Junichi Tochigi, JP 382 6294
Obonai, Toshimitsu Tochigi, JP 48 293
Okazaki, Kenichi Tochigi, JP 400 4734
Yamazaki, Shunpei Tokyo, JP 7534 239327

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