GaN reliability built-in self test (BIST) apparatus and method for qualifying dynamic on-state resistance degradation

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United States of America

PATENT NO 12163995
APP PUB NO 20230280391A1
SERIAL NO

18196380

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Abstract

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An apparatus and method for testing gallium nitride field effect transistors (GaN FETs) are disclosed herein. In some embodiments, the apparatus includes: a high side GaN FET, a low side GaN FET, a high side driver coupled to a gate of the high side GaN FET, a low side driver coupled to a gate of the low side GaN FET, and a driver circuit coupled to the high side and low side drivers and configured to generate drive signals capable of driving the high and low side GaN FETs, wherein the high and low side GaN FETs and transistors, within the high and low side drivers and the driver circuit, are patterned on a same semiconductor device layer during a front-end-of-line (FEOL) process.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Kun-Lung Chu Pei, TW 38 404
Chern, Chan-Hong Palo Alto, US 230 1822
Huang, Ruo-Rung Hsin-Chu, TW 3 1
Lai, Yu-Ann Hsin-Chu, TW 3 1
Yang, Chun-Yi Hsinchu, TW 28 82

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