Method for producing an α- or β-gallium oxide crystal by bring an aqueous solution including Ga ions into a supercritical state

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United States of America

PATENT NO 12163252
APP PUB NO 20220162768A1
SERIAL NO

17650672

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Abstract

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An α- or β-Ga2O3 crystal is produced by bringing an aqueous solution including a Ga ion into a supercritical state having a temperature of 400° C. or more and a pressure of 22.1 MPa or more.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTD2-56 SUDA-CHO MIZUHO-KU NAGOYA-SHI AICHI-PREFECTURE 467-8530

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maeda, Miho Nagoya, JP 151 2914
Yoshikawa, Jun Nagoya, JP 136 4192

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