Semiconductor structure and forming method thereof

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United States of America

PATENT NO 12159870
APP PUB NO 20230246030A1
SERIAL NO

17587342

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Abstract

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A semiconductor structure and forming method thereof are provided. A substrate includes a first region, a second region, and a boundary region defined between the first region and the second region. An isolation structure is disposed in the boundary region. An upper surface of the isolation structure has a stepped profile. A first boundary dielectric layer and a second boundary dielectric layer are disposed over the isolation structure. The first boundary dielectric layer is substantially conformal with respect to the stepped profile of the isolation structure.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Jhih-Bin Hsinchu, TW 25 18
Chou, Chien-Chih New Taipei, TW 90 310
Ciou, Yi-Kai Taoyuan, TW 6 0
Huang, Hung-Shu Taichung, TW 22 17
Jong, Yu-Chang Hsinchu, TW 62 330
Liu, Ming Chyi Hsinchu, TW 149 514
Lu, Yu-Lun Hsinchu, TW 13 22
Song, Jhu-Min Nantou County, TW 23 4
Tsai, Tsung-Chieh Hsin-Chu County, TW 43 165

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