System and method for aligned stitching

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12154862
APP PUB NO 20230268285A1
SERIAL NO

18310743

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Abstract

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A method for manufacturing semiconductor devices include steps of depositing a first photoresist over a first dielectric layer, first exposing the first photoresist to a first light-exposure using a first lithographic mask, and second exposing the first photoresist to a second light-exposure using a second lithographic mask. An overlap region of the first photoresist is exposed to both the first light-exposure and the second light-exposure. The first dielectric layer is thereafter patterned to form a mask overlay alignment mark in the overlap region. The patterning includes etching the first dielectric layer form a trench, and filling the trench with a conductive material to produce the alignment mark. A second dielectric layer is deposited over the alignment mark, and a second photoresist is deposited over the second dielectric layer. A third lithographic mask is aligned to the second photoresist using the underlying mask overlay alignment mark for registration.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD VI HSINCHU SCIENCE PARK HSINCHU 300

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Ming-Fa Taichung, TW 524 4489
Hu, Chih-Chia Taipei, TW 52 329
Yu, Chang-Ching Hsinchu, TW 4 14

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