Method and device for correcting errors in resistive memories

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12154647
APP PUB NO 20230187013A1
SERIAL NO

18077122

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Abstract

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A solution for improving the correction of errors in a 2T2R resistive memory protected by an error correction code. A method that makes it possible, through 1T1R read operations, to identify, in a codeword stored in memory, bits liable to be incorrect, called “erasures”, and then to invert these bits in the stored codeword in order to generate a new word corrected by the ECC.

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Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESBÂTIMENT LE PONANT D 25 RUE LEBLANC PARIS 75015

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gherman, Valentin Grenoble, FR 15 50

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