Magnetic tunnel junction device and method of forming same

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United States of America

PATENT NO 12154608
APP PUB NO 20240021230A1
SERIAL NO

18366779

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Abstract

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A semiconductor device and a method of forming the same are provided. The method includes forming a bottom electrode layer over a substrate. A magnetic tunnel junction (MTJ) layers are formed over the bottom electrode layer. A top electrode layer is formed over the MTJ layers. The top electrode layer is patterned. After patterning the top electrode layer, one or more process cycles are performed on the MTJ layers and the bottom electrode layer. A patterned top electrode layer, patterned MTJ layers and a patterned bottom electrode layer form MTJ structures. Each of the one or more process cycles includes performing an etching process on the MTJ layers and the bottom electrode layer for a first duration and performing a magnetic treatment on the MTJ layers and the bottom electrode layer for a second duration.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSIN-CHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chiu, Yi-Wei Kaohsiung, TW 145 922
Hsu, Li-Te Shanhua Township, TW 61 327
Liang, Jinn-Kwei Yongkang, TW 8 58
Lin, Chin-Hsing Chiayi, TW 15 56
Lin, Shih-Ho Jhubei, TW 31 104
Liou, Joung-Wei Zhudong Town, TW 66 543
Liu, Kuang-I Hsinchu, TW 5 14
Shen, Bo-Jhih Tainan, TW 8 35
Tsai, Han-Ting Kaoshiung, TW 82 398
Wu, Cheng-Yi Taichung, TW 49 150

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