Method of manufacturing semiconductor devices

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12153350
APP PUB NO 20240019787A1
SERIAL NO

18223993

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Abstract

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In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Chia-Fong Hsinchu, TW 5 1
Chang, Huicheng Hsinchu, TW 270 1020
Chang, Ya Hui Hsinchu, TW 54 176
Chen, Chia-Cheng Hsinchu, TW 140 822
Chen, Liang-Yin Hsinchu, TW 145 512
Lin, Wei-Liang Hsinchu, TW 90 522
Liu, Ru-Gun Hsinchu, TW 404 6961
Shen, Yu-Tien Hsinchu, TW 40 65
Shieh, Jyu-Horng Hsinchu, TW 138 1171
Su, Yi-Nien Hsinchu, TW 57 315
Suen, Shu-Huei Hsinchu, TW 24 37
Yeh, Ya-Wen Hsinchu, TW 18 44
Yen, Yung-Sung Hsinchu, TW 87 446

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