Nitride etchant composition and method

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United States of America

PATENT NO 12152187
APP PUB NO 20220049160A1
SERIAL NO

17402126

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Abstract

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Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

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Patent Owner(s)

Patent OwnerAddress
ENTEGRIS INC3500 LYMAN BLVD CHASKA MN 55318

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chae, SeungHyun Gunpo, KR 7 14
Hong, Eric Bundang, KR 13 42
Hong, SeongJin Cheongju, KR 15 22
Kim, WonLae Gunpo, KR 11 11
Yang, JeongYeol Gunpo, KR 6 2
Yeo, JuHee Suwon, KR 8 2

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