Gate-all-around structure and methods of forming the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12148836
APP PUB NO 20230261114A1
SERIAL NO

18305584

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Abstract

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Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer including different semiconductor materials, and the fin comprises a channel region and a source/drain region; forming a dummy gate structure over the channel region of the fin and over the substrate; etching a portion of the fin in the source/drain region to form a trench therein, wherein a bottom surface of the trench is below a bottom surface of the second semiconductor layer; selectively removing an edge portion of the second semiconductor layer in the channel region such that the second semiconductor layer is recessed; forming a sacrificial structure around the recessed second semiconductor layer and over the bottom surface of the trench; and epitaxially growing a source/drain feature in the source/drain region of the fin.

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Patent Owner(s)

Patent OwnerAddress
PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC251 LITTLE FALLS DRIVE WILMINGTON DE 19808-1674

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lin, Chun-Hsiung Hsinchu, TW 118 1300
Wang, Chih-Hao Hsinchu County, TW 1232 8869
Wang, Pei-Hsun Hsinchu, TW 50 141

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