Semiconductor device, method of manufacturing semiconductor device, and method of recycling substrate

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12148666
APP PUB NO 20230245927A1
SERIAL NO

18131486

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Abstract

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In one embodiment, a method of manufacturing a semiconductor device includes forming a first semiconductor layer including impurity atoms with a first density, on a first substrate, forming a second semiconductor layer including impurity atoms with a second density higher than the first density, on the first semiconductor layer, and forming a porous layer resulting from porosification of at least a portion of the second semiconductor layer. The method further includes forming a first film including a device, on the porous layer, providing a second substrate provided with a second film including a device, and bonding the first and second substrates to sandwich the first and second films. The method further includes separating the first and second substrates from each other such that a first portion of the porous layer remains on the first substrate and a second portion of the porous layer remains on the second substrate.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO 108-0023

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hayashi, Hidekazu Yokkaichi, JP 98 670
Matsuo, Mie Yokkaichi, JP 71 1932

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