Deposition of tungsten on molybdenum templates

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United States of America

PATENT NO 12148623
APP PUB NO 20220013365A1
SERIAL NO

17294378

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Abstract

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Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. The methods involve forming bulk conductive films on thin low resistivity transition metal layers that have large grain size. The bulk conductive films follow the grains of the low resistivity transition metal films, resulting in large grain size. Also provided are devices including template layers and bulk films.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Danek, Michal Cupertino, US 118 10162
Thombare, Shruti Vivek Sunnyvale, US 19 937
van, Cleemput Patrick A San Jose, US 57 4102

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