Laser annealing method, laser annealing device, and crystallized silicon film substrate
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Nov 19, 2024
Grant Date -
Jan 6, 2022
app pub date -
Jan 16, 2020
filing date -
Jan 16, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully