Non-volatile memory cell with single poly, floating gate extending over two wells

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 12148473
APP PUB NO 20220319598A1
SERIAL NO

17697846

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Abstract

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In an embodiment a non-volatile memory cell includes a substrate, a first body in the substrate, a second body in the substrate, a first storage transistor having a first conduction region and a second conduction region in the first body, the first and second conduction regions delimiting a first channel region in the first body, a first control gate region in the second body, an insulating region overlying the substrate, a single floating gate region extending on the substrate and embedded in the insulating region, the single floating gate region having a first portion on the first body and a second portion on the second body, the first portion and second portion being connected and electrically coupled, a first selection via extending through the insulating region and electrically coupling the first conduction region with a first conduction node, a second selection via extending through the insulating region and electrically coupling the second conduction region with a second conduction node and a first control via extending though the insulating region and electrically coupling the first control gate region with a first control node.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS INTERNATIONAL N VCHEMIN DU CHAMP-DES-FILLES 39 1228 PLAN-LES-OUATES GENEVA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bregoli, Roberto Offlaga, IT 5 5
Rana, Vikas Noida, IN 59 137

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