Mask correction method, mask correction device for double patterning and training method for layout machine learning model
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United States of America
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Nov 19, 2024
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Nov 24, 2022
app pub date -
Jun 28, 2021
filing date -
Jun 28, 2021
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Abstract
A mask correction method, a mask correction device for double patterning, and a training method for a layout machine learning model are provided. The mask correction method for double patterning includes the following steps. A target layout is obtained. The target layout is decomposed into two sub-layouts, which overlap at a stitch region. A size of the stitch region is analyzed by the layout machine learning model according to the target layout. The layout machine learning model is established according to a three-dimensional information after etching. An optical proximity correction (OPC) procedure is performed on the sub-layouts.
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