Method of obtaining a smooth surface with epitaxial lateral overgrowth

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United States of America

PATENT NO 12146237
APP PUB NO 20210381124A1
SERIAL NO

17285827

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Abstract

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A method for obtaining a smooth surface of an epi-layer with epitaxial lateral overgrowth. The method does not use mis-cut orientations and does not suppress the occurrence of pyramidal hillocks, but instead embeds the pyramidal hillocks in the epi-layer. A growth restrict mask is used to limit the expansion of the pyramidal hillocks in a lateral direction. The surface of the epi-layer becomes extremely smooth due to the disappearance of the pyramidal hillocks.

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Patent Owner(s)

  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gandrothula, Srinivas Santa Barbara, US 20 7
Kamikawa, Takeshi Kyoto, JP 124 1125

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