Etching composition, method for etching insulating film of semiconductor devices using the same and method for preparing semiconductor devices

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United States of America

PATENT NO 12146092
APP PUB NO 20210062088A1
SERIAL NO

16993424

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Abstract

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An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below:

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Patent Owner(s)

Patent OwnerAddress
SK INNOVATION CO LTDSEOUL 110-110
SK INC26 JONG-RO JONGNO-GU SEOUL 03188

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jo, Jin Kyung Yeongju-si, KR 9 9
Kim, Cheol Woo Daejeon, KR 47 310
Kim, Young Bom Yeongju-si, KR 9 9
Kwak, Jae Hoon Yeongju-si, KR 23 60
Lee, Jong Ho Yeongju-si, KR 415 3173
Lee, Kwang Kuk Daejeon, KR 26 77
Shin, Jung Ha Yeongju-si, KR 2 0

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